JPS61119341U - - Google Patents

Info

Publication number
JPS61119341U
JPS61119341U JP1985000950U JP95085U JPS61119341U JP S61119341 U JPS61119341 U JP S61119341U JP 1985000950 U JP1985000950 U JP 1985000950U JP 95085 U JP95085 U JP 95085U JP S61119341 U JPS61119341 U JP S61119341U
Authority
JP
Japan
Prior art keywords
surface treatment
plate
substrate
processed
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1985000950U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0236276Y2 (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985000950U priority Critical patent/JPH0236276Y2/ja
Priority to US06/810,425 priority patent/US4693211A/en
Priority to KR1019860000066A priority patent/KR900008869B1/ko
Publication of JPS61119341U publication Critical patent/JPS61119341U/ja
Application granted granted Critical
Publication of JPH0236276Y2 publication Critical patent/JPH0236276Y2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
JP1985000950U 1985-01-10 1985-01-10 Expired JPH0236276Y2 (en])

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1985000950U JPH0236276Y2 (en]) 1985-01-10 1985-01-10
US06/810,425 US4693211A (en) 1985-01-10 1985-12-18 Surface treatment apparatus
KR1019860000066A KR900008869B1 (ko) 1985-01-10 1986-01-09 표면 처리장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985000950U JPH0236276Y2 (en]) 1985-01-10 1985-01-10

Publications (2)

Publication Number Publication Date
JPS61119341U true JPS61119341U (en]) 1986-07-28
JPH0236276Y2 JPH0236276Y2 (en]) 1990-10-03

Family

ID=11487954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985000950U Expired JPH0236276Y2 (en]) 1985-01-10 1985-01-10

Country Status (3)

Country Link
US (1) US4693211A (en])
JP (1) JPH0236276Y2 (en])
KR (1) KR900008869B1 (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01241124A (ja) * 1988-03-23 1989-09-26 Tokyo Electron Ltd レジスト被塗布体の加熱装置
JP2007027617A (ja) * 2005-07-21 2007-02-01 Dainippon Screen Mfg Co Ltd 基板熱処理装置

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* Cited by examiner, † Cited by third party
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US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US5780313A (en) 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6673722B1 (en) 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US5871811A (en) * 1986-12-19 1999-02-16 Applied Materials, Inc. Method for protecting against deposition on a selected region of a substrate
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPH0333058Y2 (en]) * 1987-06-26 1991-07-12
EP0318641B1 (de) * 1987-12-03 1993-10-27 Balzers Aktiengesellschaft Verfahren und Vorrichtung zur Übertragung thermischer Energie auf bzw. von einem plattenförmigen Substrat
US4987856A (en) * 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
US5129360A (en) * 1990-01-24 1992-07-14 The United States Of America As Represented By The Secretary Of The Air Force Actively cooled effusion cell for chemical vapor deposition
EP0551105A3 (en) * 1992-01-07 1993-09-15 Fujitsu Limited Negative type composition for chemically amplified resist and process and apparatus of chemically amplified resist pattern
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置
US5366002A (en) * 1993-05-05 1994-11-22 Applied Materials, Inc. Apparatus and method to ensure heat transfer to and from an entire substrate during semiconductor processing
US5791895A (en) * 1994-02-17 1998-08-11 Novellus Systems, Inc. Apparatus for thermal treatment of thin film wafer
US5471033A (en) * 1994-04-15 1995-11-28 International Business Machines Corporation Process and apparatus for contamination-free processing of semiconductor parts
US5680502A (en) * 1995-04-03 1997-10-21 Varian Associates, Inc. Thin film heat treatment apparatus with conductively heated table and surrounding radiation shield
US5853961A (en) * 1995-04-19 1998-12-29 Tokyo Electron Limited Method of processing substrate and apparatus for processing substrate
US5728260A (en) * 1996-05-29 1998-03-17 Applied Materials, Inc. Low volume gas distribution assembly and method for a chemical downstream etch tool
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JP3494435B2 (ja) * 2001-02-27 2004-02-09 東京エレクトロン株式会社 基板処理装置
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JPH0236276Y2 (en]) 1990-10-03
US4693211A (en) 1987-09-15
KR900008869B1 (ko) 1990-12-11
KR860006131A (ko) 1986-08-18

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